Semiconductor device having vertical channels and method of manufacturing the same

ABSTRACT

A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

This application is a Divisional of U.S. Ser. No. 11/457,781, filed onJul. 14, 2006, now is pending, which claims priority from Korean PatentApplication No. 10-2005-0064067, filed on Jul. 15, 2005, all of whichare hereby incorporated by reference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and a method ofmanufacturing the same, and more particularly, to a semiconductor devicehaving vertical channels and a method of manufacturing the same.

2. Description of the Related Art

As the length of a channel in a semiconductor device, for example, afield effect transistor (FET), decreases, several characteristics of theFET degrade. For example, short channel effects such as punch-through,drain induced barrier lowering (DIBL), and sub-threshold voltage swingoccur. In addition, there are other problems such as an increase inparasitic capacitance (contact capacitance) between a contact region anda substrate, and an increase in leakage current.

In a FET including an active region having vertical channels on asemiconductor substrate, at least one side surface of a fin is used as achannel. A short channel effect can be prevented by an increase in thelength of the channel, thereby improving current characteristics.Hereinafter, an active region having a vertical channel is referred toas a fin, and a FET having a fin is referred to as a fin-FET.

FIG. 1A is a plan view of a conventional fin-FET. FIG. 1B is across-sectional view of the conventional fin-FET taken along line 1B-1Bof FIG. 1.

Referring to FIGS. 1A and 1B, an element isolation layer 20 whichdefines an active region 12 having vertical channels is formed on asemiconductor substrate 10. A gate electrode 16 covers the active region12, an element isolation layer 21 is disposed along a minor axis of theactive region 12, and an element isolation layer 22 is disposed along amajor axis of the active region 12. For convenience, the gate electrodes16 can be divided into a gate electrode 16 a intersecting the activeregion 12 and a gate electrode 16 b intersecting the element isolationlayer 22 disposed along the major axis of the active region 12.Reference numeral 18 is an interlayer insulation layer including thegate electrode 16 therein.

The gate electrode 16 b intersecting the element isolation layer 22disposed along the major axis of the active region 12 contacts thesidewall of the active region 12 and is buried in the element isolationlayer 22. When electric power is supplied to the buried gate electrode16 b, leakage current is generated in adjacent portions of the activeregion 12, i.e., portions “a” of the active region 12. The leakagecurrent degrades the refresh characteristics of the memory device.

Fin-FETs in which the gate electrode 16 b is not found on the elementisolation layer 22 are disclosed are U.S. Pat. No. 6,396,108 and U.S.Pat. No. 6,583,469. In these disclosures, to prevent the formation ofthe gate electrode 16 on the element isolation layer 22, the gateelectrode 16 has a contact shape or bar shape, and thus the gateelectrode 16 cannot be formed on the element isolation layer 22 disposedalong the major axis of the active region 12.

However, as the design rule decreases, it becomes difficult to form acontact shape or bar shape gate electrode pattern on a substrate. Inparticular, it is difficult to obtain an overlap margin during aphotolithography process in which the gate electrode pattern is formed.

SUMMARY

The present invention provides a method of manufacturing a semiconductordevice having vertical channels that can prevent leakage current causedby a gate electrode intersecting an element isolation layer extendingalong a major axis of an active region, and provide a sufficient overlapmargin. The present invention also provides a semiconductor devicemanufactured using the above method.

According to an embodiment of the present invention, there is provided amethod of manufacturing a semiconductor device having vertical channels,the method including: etching a semiconductor substrate to protrude aplurality of active regions that are adjacent to each other, formingfilling material layers in element isolation regions by filling etchedportions between the active regions, and forming a first mask patternthat extends in a first direction and covers at least a portion betweenadjacent active regions. In addition the method also includes forming asecond mask pattern to extend in a second direction at a predeterminedangle with respect to the first direction, removing an exposed portionof the filling material layers using the first and second mask patternsas etching masks, removing the first and second mask patterns, exposingthe active regions disposed between the filling material layers, andforming gate electrodes on the exposed active regions.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings in which:

FIG. 1A is a plan view of a conventional fin-FET;

FIG. 1B is a cross-sectional view taken along line 1B-1B of FIG. 1;

FIGS. 2A through 8A are plan views illustrating a method of forming afin-FET according to an embodiment of the present invention;

FIGS. 2B through 6B are cross-sectional views illustrating the method ofFIGS. 2A through 6A, respectively, taken along line A-A of FIG. 2A;

FIGS. 2C through 8C are cross-sectional views illustrating the method ofFIGS. 2A through 8A, respectively, taken along line B-B of FIG. 2A;

FIGS. 2D through 8D are cross-sectional views illustrating the method ofFIGS. 2A through 8A, respectively, taken along line C-C of FIG. 2A;

FIGS. 7B and 8B are cross-sectional views illustrating the method ofFIGS. 7A and 8A, respectively, taken along line A′-A′ of FIG. 2A;

FIGS. 9A and 10A are plan views illustrating a method of forming afin-FET according to another embodiment of the present invention;

FIGS. 9B and 10B are cross-sectional views illustrating the method ofFIGS. 9A and 10A, respectively, taken along line A′-A′ of FIG. 2A;

FIGS. 9C and 10C are cross-sectional views illustrating the method ofFIGS. 9A and 10A, respectively, taken along line B-B of FIG. 2A; and

FIGS. 9D and 10D are cross-sectional views illustrating the method ofFIGS. 9A and 10A, respectively, taken along line C-C of FIG. 2A.

DETAILED DESCRIPTION

Hereinafter, the present invention will be described more fully withreference to the accompanying drawings, in which exemplary embodimentsof the invention are shown. The invention may, however, be embodied inmany different forms and should not be construed as being limited to theembodiments set forth herein; rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the concept of the invention to those skilled in the art. In thedrawings, like reference numerals denote like elements, and the sizesand thicknesses of layers and regions are exaggerated for clarity. Itwill also be understood that when a layer is referred to as being “on”another layer or substrate, it can be directly on the other layer orsubstrate, or intervening layers may also be present. In thedescriptions, like reference numerals denote like elements.

In some embodiments of the present invention, a gate electrode is formedon an element isolation layer disposed along a major axis of an activeregion in a fin-FET using a line shaped mask pattern. The bottom portionof the gate electrode is filled with filling material layer, therebypreventing leakage current in a semiconductor substrate due to the gateelectrode.

In some embodiments of the present invention, the gate electrode isformed using a damascene process. In addition, a fin-FET according to anembodiment of the present invention may have a double gate electrodeformed using the damascene process or have a triple gate electrodeformed using the damascene process.

FIGS. 2A through 8A are plan views illustrating a method of forming afin-FET according to an embodiment of the present invention. FIGS. 2Bthrough 6B are cross-sectional views illustrating the method of FIGS. 2Athrough 6A, respectively, taken along line A-A of FIG. 2A. FIGS. 7B and8B are cross-sectional views illustrating the method of FIGS. 7A and 8A,respectively, taken along line A′-A′ of FIG. 2A. FIGS. 2C through 8C arecross-sectional views illustrating the method of FIGS. 2A through 8A,respectively, taken along line B-B of FIG. 2A. FIGS. 2D through 8D arecross-sectional views illustrating the method of FIGS. 2A through 8A,respectively, taken along line C-C of FIG. 2A.

Referring to FIGS. 2A through 2D, a device isolation layer or an elementisolation layer 112, which defines an active region 102 having verticalchannels, is formed on a semiconductor substrate 100. In a method offorming the element isolation layer 112, mask layers 105, defining theelement isolation layer 112 and each including a pad oxide layer 104 anda pad nitride layer 106, are formed on the semiconductor substrate 100using a conventional photolithography process. The pad oxide layers 104are formed to reduce stress between the substrate 100 and the padnitride layers 106, and may have a thickness of about 20 to about 200 Å,and preferably about 100 Å. The pad nitride layers 106 are used as ahard mask when etching to form a recessed region 113 and is deposited toa thickness of about 500 to about 2,000 Å, and preferably about 800 toabout 850 Å. The deposition method for the pad nitride layers 106 may bea conventional method, such as chemical vapor deposition (CVD),sub-atmospheric CVD (SACVD), low pressure CVD (LPCVD), or plasmaenhanced CVD (PECVD).

The semiconductor substrate 100 is exposed using an anisotropic dryetching method. The semiconductor substrate 100 is then etched to apredetermined depth using the mask layers 105 as an etching mask to formrecessed regions 113. A photoresist pattern (not illustrated) is removedusing conventional methods, such as ashing using oxygen plasma ororganic stripping. The recessed region 113 is formed to a sufficientdepth to isolate elements. Next, sidewall oxide layers 108 are formed onthe entire surface of the recessed region 113. The sidewall oxide layers108 are formed on the inner walls and bottom of the recessed region 113to compensate for the damage caused during the etching process used informing the recessed region 113. The sidewall oxide layer 108 is athermal oxide layer or a CVD oxide layer, and may have a thickness ofabout 20 to about 200 Å.

Next, a nitride layer liner 110 covering the sidewall oxide layer 108and the exposed mask layer 105 is deposited. The nitride layer liner 110may be formed along the inner surfaces of the recessed region 113. Thenitride layer liner 110 prevents oxidization of the sidewall oxide layer108 in subsequent processes and improves the insulating characteristicsof a later formed element isolation layer. The nitride layer liner 110is formed to a thickness of about 50 to about 300 Å using CVD. A cappinglayer (not illustrated) may be formed on the nitride layer liner 110.The capping layer prevents damage to the nitride layer liner 110 insubsequent processes and may be formed of middle temperature oxide(MTO).

The forming of the nitride layer liner 110 can be omitted, if desired.In addition, the pad nitride layers 106 may be removed, or may remain toprevent damage to the active regions 102 in subsequent processes.

The recessed regions 113 are filled with a filling material layer. Thefilling material layer is an insulation layer and may be chosen from anundoped silicate glass (USG) layer, an high-density plasma (HDP) oxidelayer, a tetraethylorthosiliate (TEOS) layer formed using PECVD, and anoxide layer formed using PECVD. The HDP oxide layer, which is a thinlayer, may be the most suitable for reclaiming the recessed regions 113.The HDP CVD process may be a combination of a CVD process and an etchingprocess using sputtering. In the HDP CVD process, a depositing gas fordepositing a material layer and a sputtering gas with which a depositedmaterial layer is etched via sputtering are supplied into a chamber. Inan embodiment of the present invention, SiH₄ and O₂ are supplied intothe chamber as depositing gases and an inert gas, such as an argon gas,is supplied into the chamber as the sputtering gas. Some of the supplieddepositing gas and sputtering gas is ionized by plasma induced by highfrequency electric power in the chamber. Biased high frequency electricpower is supplied to a wafer chuck, i.e., an electrostatic chuck, in thechamber where the substrate is loaded, thus accelerating the ionizeddepositing gas and sputtering gas to the surface of the substrate. Theaccelerated depositing gas ions form a silicon oxide layer, and theaccelerated sputtering gas ions sputter the deposited silicon oxidelayer. Therefore, the element isolation layer 112 formed of HDP oxide isthin and has good gap fill characteristics.

The recessed region 113 filled with the filling material layer is thenplanarized until the top surface of the nitride layer liner 110 isexposed to form the element isolation layer 112. The planarizationprocess may be performed using chemical mechanical polishing (CMP) or anetch-back process. In the planarization process, the nitride layer liner110 is used as a planarization stopper. For example, when theplanarization process is performed using CMP, the nitride layer liner110 acts as a CMP stopper. A slurry used during CMP may etch the elementisolation layers 112, for example, the HDP oxide layer, faster than thenitride layer liner 110. Accordingly, a slurry including a seria groupabrasive may be used.

Referring to FIGS. 3A through 3D, a first mask pattern 114 covering themajor axis of the active region 102 is formed. The first mask pattern114 may cover first element isolation layers 120 (see FIG. 7A) betweenthe adjacent active regions 102 along the direction of the major axis ofthe active region. The first mask pattern 114 may be arranged instripes. To form the first mask pattern 114, a mask material layer isformed on the element isolation layer 112 and the active regions 102.Next, a photoresist pattern (not illustrated) defining the first maskpattern 114 covering the major axis of the active region 102 is defined.The mask material layer is etched in the shape of the photoresistpattern to form the first mask pattern 114.

The first mask pattern 114 is used as a hard mask for forming gateelectrodes and has a sufficient etch selectivity to the elementisolation layer 112. For example, if the element isolation layer 112 isa silicon oxide layer, the first mask pattern 114 may be a siliconnitride layer. The first mask pattern 114, e.g., the silicon nitridelayer, may be deposited to a thickness of about 2,000 to about 6,000 Å,and preferably about 3,500 to about 4,500 Å. The deposition method maybe a conventional method, for example, CVD, SACVD, LPCVD, or PECVD.

The width of the first mask pattern 114 is equal to or less than thewidth of the active region 102. For example, the width of the first maskpattern 114 may be about 1 to about 15 nm less than the width of theactive region 102, and preferably about 3 to about 8 nm less than thewidth of the active region 102, thereby enhancing an overlap. However,when the width of the first mask pattern 114 is less than this, aportion of the first element isolation region 120 along the major axisof the active region 102 may be etched. To prevent a portion of thefirst element isolation region 120 from being etched, auxiliary patternsmay be further formed to correspond to the first element isolation layer120 on both sides of a portion of a reticle used to form the first maskpattern 114.

Although not illustrated in detail in the drawings, the first maskpattern 114 may be formed from one end of a plurality of the activeregions 102 to another end of a plurality of the active regions 102. Forexample, the arrangement of the plurality of the active regions 102 maybe continuous from one end to another end of a cell region.

The process margin of the first mask pattern 114 having a line shape forforming a gate electrode is greater than the process margin of a maskpattern with a contact shape or a bar shape. Due to the large processmargin, greater integration can be obtained, and thus the wavelength ofthe light source of a light emitting apparatus can be increased or alight emitting apparatus having a conventional light source and thenumber of apertures can be used without increasing the number ofapertures. Accordingly, the first mask pattern 114 having a line shapecan be efficiently applied to the formation of a fine pattern. Inaddition, the first mask pattern 114 having a line shape can prevent thegeneration of striation during the formation of the gate electrode, andthus an additional hard mask for removing the striation is unnecessary.

Referring to FIGS. 4A through 4D, filling layers 116 are formed on theelement isolation layer 112 to fill the space between the first maskpatterns 114, if desired. Each of the filling layers 116 may be aninsulation layer chosen from an USG layer, an HDP oxide layer, a TEOSlayer formed using PECVD, and an oxide layer formed using PECVD.However, since the element isolation layers 112 and the filling layers116 may be simultaneously removed in a subsequent process, the elementisolation layers 112 and the filling layers 116 may be formed ofsubstantially the same material. For example, the element isolationlayers 112 and the filling layers 116 may both be HDP oxide layers.

The filling layers 116 are planarized to the top surface of the firstmask pattern 114. The planarization process is performed using CMP or anetch-back process. In the planarization process, the first mask pattern114 is used as a planarization stopper layer. For example, when thefilling layers 116 are planarized using the CMP, the first mask pattern114 acts as a CMP stopper. A slurry used during the CMP may etch thefilling layers 116, for example, the HDP oxide layer, faster than thefirst mask pattern 114. A slurry including a seria group abrasive may beused. Here, the filling layers 116 are used for the planarization, andthus are optionally formed.

Referring to FIGS. 5A through 5D, a second mask pattern 118, i.e., aphotoresist pattern, is formed. The second mask pattern 118 extends at apredetermined transverse angle, for example, a right angle or an acuteangle, with respect to the major axis of the active region 102, andincludes stripes separated from each other by a predetermined distance.The second mask pattern 118 exposes portions of top surfaces of thefilling layers 116 and portions of the first mask pattern 114.

Referring to FIGS. 6A through 6D, portions of the element isolationlayers 112 along the minor axis of the active regions 102 are removedusing the second mask pattern 118 and the first mask pattern 114 as anetching mask to form second element isolation layers 122. That is,portions of the filling layers 116 and the element isolation layers 112disposed along the minor axis of the active regions 102 are removed bywet etching. For example, when the element isolation layers 112 and thefilling layers 116 are HDP oxide layers, they can be removed using abuffered oxide etchant (BOE), which is a mixed solution of diluted HF,NH₄F, or HF and ionized water.

In an embodiment of the present invention, a first direction is definedalong a major axis of the active region, for example, a direction inwhich line B-B of FIG. 2A extends. A first element isolation region 120(FIG. 6C) disposed between the active regions extends along the firstdirection. A second direction may be along a minor axis of the activeregion, for example, a direction in which line A-A of FIG. 2A extends.An element isolation region disposed between active regions extendsalong the second direction. In other words, the element isolation regionextending along the second direction may be an element isolation regiondisposed in a region in which the line C-C of FIG. 2A extends. Theelement isolation region extending along the second direction can bedivided into a second element isolation region 122 which is recessed anda third element isolation region 124 which is not recessed. Thus, theelement isolation layer may be divided into the first, second, and thirdelement isolation regions (120, 122 and 124 respectively of FIGS. 6B, 6Cand 6D) for convenience of explanation and ease of understanding, notfor limiting the scope of the present invention.

Here, the degree to which the element isolation layers 112 are removeddetermines the channel lengths of the fin-FET according to thisembodiment of the present invention. The recess depth is sufficient toisolate the adjacent active regions 102. As a result of the etching, afirst element isolation layer 120 is formed between the active regions102 along the first direction, and recessed second element isolationlayers 122 and unrecessed third element isolation layers 124 arealternately disposed along the second direction.

Referring to FIGS. 7A through 7D, the active regions 102 disposedbetween the second element isolation layers 122 are exposed.Specifically, the first mask pattern 114, the nitride layer liner 110,the mask layers 105, and the sidewall oxide layers 108, which cover theactive regions 102, are removed. The exposure of the active regions 102includes three operations because the nitride layer liners 110 disposedbetween the second element isolation layers 122 and the active regions102 may be damaged in the processes of removing several layers,resulting in the generation of humps. A hump can generate leakagecurrent and thus degrade current characteristics.

First, the first mask pattern 114, the nitride layer liner 110, and thepad nitride layers 106 disposed on the active regions 102 are removed byanisotropic dry etching. The nitride layers, i.e., the first maskpattern 114, the nitride layer liners 110, and the pad nitride layers106, can be removed using a fluoride carbon group gas such as aC_(x)F_(y) group gas and a C_(a)H_(b)F_(c) group gas, for example, CF₄,CHF₃, C₂F₆, C₄F₈, CH₂F₂, CH₃F, CH₄, C₂H₂, C₄F₆, or a combinationthereof. Argon gas may be used as an environmental gas.

Second, the portions of the nitride layer liner 110 remaining on thesidewalls of the active regions 102 are removed by isotropic wet etchingusing H₃PO₄. Third, the sidewall oxide layers 108 and the pad oxidelayers 104 are removed by isotropic wet etching. Here, a BOE including amixed solution of diluted HF, NH₄F, or HF and ionized water may be usedas an etching solution.

When the surfaces of the active regions 102 are exposed, gate insulationlayers 126 covering the active regions 102 are formed. The gateinsulation layer 126 may be a silicon oxide layer, a hafnium oxidelayer, a zirconium oxide layer, an aluminum oxide layer, a tantalumoxide layer, or a lanthanum oxide layer, which is deposited using CVD orALD.

Referring to FIGS. 8 a through 8D, gate electrodes 128 which fill therecessed regions on the second element isolation layers 122 and coverportions of the active regions 102 and the first element isolationlayers 120 are formed. Specifically, the gate electrodes 128 aredeposited to fill the spaces above the second element isolation layers122 and completely cover the top surface. The gate electrodes 128 arepatterned using conventional photolithography so as to extend at apredetermined angle, for example, a right angle or an acute angle, withrespect to the major axis of the active region 102, and are separatedfrom each other by a predetermined distance. The gate electrodes 128 areelectrically insulated from each other by interlayer insulation layers130. The gate electrodes 128 may have the same 2-dimensional shape asthe second mask patterns 118 in FIG. 5.

The gate electrodes 128 according to this embodiment of the presentinvention are formed using a damascene process. Accordingly, an overlapmargin required to form the gate electrodes 128 is sufficient. That is,the gate electrodes 128 fill the spaces above the second elementisolation layer 122 and cover the top surface and both side surfaces ofthe active regions 102. The fin-FET according to the first embodiment ofthe present invention has a triple gate structure in which the gateelectrodes 128 cover the top surface and both side surfaces of theactive regions 102.

Each of the gate electrodes 128 may include a polysilicon layer, asilicide layer, and a capping insulation layer sequentially stacked.However, instead of the polysilicon layer, a monolayer or a multilayercomposed of amorphous silicon, poly Si—Ge, and/or a material includingmetal can be used. The material including metal may include a metal suchas tungsten or molybdenum or may include a conductive metal nitride,such as titanium nitride, tantalum nitride, or tungsten nitride. Thesilicide layer may or may not be included. The capping insulation layermay comprise a material having a sufficient etch selectivity to aninterlayer insulation layer which is deposited in a subsequent process,and may be, for example, a silicon nitride layer.

For convenience, the gate electrodes 128 can be divided into firstelectrodes 128 a intersecting the active regions 102 and secondelectrodes 128 b intersecting the first element isolation layer 120disposed along the first direction. The top surfaces of the firstelement isolation layers 120 are at the same level or higher than thetop surfaces of the active regions 102. The second electrodes 128 b aredisposed on the first element isolation layers 120, and thus thegeneration of leakage current in the semiconductor substrate 100 due tothe electric power supplied to the second electrodes 128 b can beprevented because the electric field formed by the second electrodes 128b is blocked by the first element isolation layers 120. Meanwhile, bothends of the second electrodes 128 b are connected to the gate electrodesdisposed on the second element isolation layers 122 to be extended.

FIGS. 9A and 10A are plan views illustrating a method of forming afin-FET according to another embodiment of the present invention. FIGS.9B and 10B are cross-sectional views illustrating the method of FIGS. 9Aand 10A, respectively, taken along line A′-A′ of FIG. 2A. FIGS. 9C and10C are cross-sectional views illustrating the method of FIGS. 9A and10A, respectively, taken along line B-B of FIG. 2A. FIGS. 9D and 10D arecross-sectional views illustrating the method of FIGS. 9A and 10A,respectively, taken along line C-C of FIG. 2A.

Since the defining of the active region 102 and the forming of the firstmask pattern 114 is the same as in the first embodiment as illustratedin FIGS. 2A through 6D, a description thereof will not be provided forthe present embodiment.

Referring to FIGS. 9A through 9D, the active regions 102 disposedbetween the second element isolation layers 122 are exposed.Specifically, the first mask pattern 114, the nitride layer liner 110,portions of the pad nitride layers 106, and the sidewall oxide layers108 which cover the active regions 102 are removed. The exposure of theactive region 102 includes three operations because the nitride layerliners 110 disposed between the second element isolation layers 122 andthe active regions 102 may be damaged in the process of removing severallayers, resulting in the generation of humps. The hump can generateleakage current and thus degrade current characteristics.

First, the first mask pattern 114 and the nitride layer liner 110disposed on the active regions 102 are removed by anisotropic dryetching. The nitride layers, i.e., the first mask pattern 114 and thenitride layer liner 110, can be removed using a fluoride carbon groupgas such as C_(x)F_(y) group gas and a C_(a)H_(b)F_(c) group gas, forexample, CF₄, CHF₃, C₂F₆, C₄F₈, CH₂F₂, CH₃F, CH₄, C₂H₂, C₄F₆, or acombination thereof. Argon gas may be used as an environmental gas. Themask layer 105 may not be etched, or the upper portion of the mask layer105 may be etched to a predetermined height.

Second, portions of the nitride layer liner 110 remaining on thesidewalls of the active regions 102 are removed by isotropic wet etchingusing H₃PO₄. Third, the sidewall oxide layers 108 and the pad oxidelayers 104 are removed by isotropic wet etching. Here, a BOE being amixed solution of diluted HF, NH₄F, or HF and ionized water may be usedas an etching solution.

When the side surfaces of the active regions 102 are exposed, gateinsulation layers 226 are formed to cover the active regions 102 andmask layers 105, including the residual pad nitride layers. The gateinsulation layer 226 may be a silicon oxide layer, a hafnium oxidelayer, a zirconium oxide layer, an aluminum oxide layer, a tantalumoxide layer, or a lanthanum oxide layer deposited using CVD or ALD.

Referring to FIGS. 10A through 10D, gate electrodes 128 which fill therecessed regions on the second element isolation layers 122 and coverportions of the active regions 102 and the first element isolationlayers 120 are formed. Specifically, the gate electrodes 128 aredeposited to fill the spaces above the second element isolation layers122 and to completely cover the top surface. The gate electrodes 128 arepatterned using conventional photolithography so as to extend at apredetermined angle, for example, a right angle or an acute angle, withrespect to the major axis of the active region 102, and are separatedfrom each other by a predetermined distance. The gate electrodes 128 areelectrically insulated from each other by interlayer insulation layers230. The gate electrodes 128 may have the same 2-dimensional shape asthe second mask pattern 118 shown in FIG. 5.

The gate electrodes 128 according to the second embodiment of thepresent invention are formed using a damascene process. Accordingly, anoverlap margin required to form the gate electrodes 128 is sufficient.That is, the gate electrodes 128 fill the spaces above the secondelement isolation layer 122 and cover both side surfaces of the activeregions 102. The fin-FET according to the second embodiment of thepresent invention has a double gate structure in which the gateelectrodes 128 cover both sides of the active regions 102.

Each of the gate electrodes 128 may include a polysilicon layer, asilicide layer, and a capping insulation layer sequentially stacked.However, instead of the polysilicon layer, a monolayer or a multilayercomposed of amorphous silicon, poly Si—Ge, and/or a material includingmetal can be used. The material including metal may include a metal suchas tungsten or molybdenum or may include a conductive metal nitride,such as titanium nitride, tantalum nitride, or tungsten nitride. Thesilicide layer may or may not be included. The capping insulation layermay be formed of a material having a sufficient etch selectivity to aninterlayer insulation layer which is deposited in a subsequent process,and may be, for example, a silicon nitride layer.

For convenience, the gate electrodes 128 can be divided into firstelectrodes 128 a intersecting the active regions 102 and secondelectrodes 128 b intersecting the first element isolation layer 120disposed along the first direction. The top surfaces of the firstelement isolation layers 120 are at the same level or higher than thetop surface of the active regions 102. The second electrodes 128 b aredisposed on the first element isolation layers 120, and thus thegeneration of leakage current in the semiconductor substrate 100 due tothe electric power supplied to the second electrodes 128 b can beprevented because the electric field produced by the second electrodes128 b is blocked by the first element isolation layers 120. Meanwhile,both ends of the second electrodes 128 b are connected to the gateelectrodes disposed on the second element isolation layers 122 to beextended.

The method of manufacturing a semiconductor device having verticalchannels according to the present invention can prevent the generationof leakage current in the semiconductor substrate since gate electrodesare formed on element isolation layers which extend upward to the samelevel or higher than the top surfaces of active regions.

In addition, in the method of manufacturing a semiconductor devicehaving vertical channels according to the present invention, gateelectrodes are formed using a line shape mask pattern, thereby obtaininga sufficient overlap margin.

In addition, the gate electrode is manufactured using a damasceneprocess, thereby significantly increasing an overlap margin.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims.

What is claimed is:
 1. A method of manufacturing a semiconductor devicehaving vertical channels, the method comprising: etching a semiconductorsubstrate to protrude a plurality of active regions which are adjacenteach other; forming filling material layers in element isolation regionsby filling etched portions between the active regions; forming a firstmask pattern that extends in a first direction and covers at least aportion between adjacent active regions; forming a second mask patternwhich extends in a second direction at a predetermined angle withrespect to the first direction; removing an exposed portion of thefilling material layers using the first and second mask patterns asetching masks, wherein removing the exposed portion of the fillingmaterial layers comprises: forming filling layers in the elementisolation regions; and forming the second mask pattern over the firstmask pattern to expose portions of top surfaces of the filling layersand a portion of the first mask pattern; removing the first and secondmask patterns; exposing the active regions disposed between the fillingmaterial layers; and forming gate electrodes on exposed active regions,wherein a top surface of an element isolation layer protrudes beyond atop surface of the active regions after removing the first and secondmask patterns and forming the gate electrodes.
 2. The method of claim 1,wherein the forming of the filling material layers in the elementisolation regions comprises: forming on the semiconductor substrate amask layer including a pad oxide layer and a pad nitride layer whichdefine the element isolation regions; forming recessed regions byanisotropic dry etching of the semiconductor substrate to apredetermined depth using the mask layer as an etching mask; formingsidewall oxide layers on sidewalls of the recessed regions; filling therecessed regions with the filling material layers; and planarizing thefilling material layers until the pad nitride layer is exposed.
 3. Themethod of claim 2, further comprising: forming a nitride layer linerwhich covers exposed portions of the sidewall oxide layers and the masklayer before filling the recessed regions.
 4. The method of claim 1,wherein the first mask pattern is arranged in a striped pattern.
 5. Themethod of claim 1, wherein forming the first mask pattern comprises:forming mask material layers on element isolation layers and the activeregions; defining a photoresist pattern which defines the first maskpattern; and etching the mask material layers according to the shape ofthe photoresist pattern.
 6. The method of claim 5, wherein the thicknessof the first mask pattern is about 2,000 Å to about 6,000 Å.
 7. Themethod of claim 5, wherein a portion of the first mask pattern remainingon an active region has a width equal to or less than the width of theactive region.
 8. The method of claim 7, wherein the width of theportion of the first mask pattern is about 1 nm to about 15 nm less thanthe width of the active region.
 9. The method of claim 7, wherein thewidth of the portion of the first mask pattern is about 3 nm to about 8nm less than the width of the active region.
 10. The method of claim 9,wherein auxiliary patterns are formed on both sides of a reticlecorresponding to a first element isolation layer in the reticle for theexposure used to form the first mask pattern.
 11. The method of claim 5,wherein the first mask pattern extends from one end of a plurality ofthe active regions to another end of the plurality of the activeregions.
 12. The method of claim 1, wherein the filling material layershave an etch selectivity with respect to the first mask pattern.
 13. Themethod of claim 1, wherein the filling material layers include siliconoxide layers and wherein the first mask pattern includes a siliconnitride layer.
 14. The method of claim 1, wherein the first directionextends substantially parallel to a major axis of the active regions.15. The method of claim 1, wherein the second direction extendssubstantially parallel to a minor axis of the active regions.
 16. Themethod of claim 1, wherein removing the exposed portion of the fillingmaterial layer layers further comprises: filling the element isolationregions disposed between the first mask pattern with the filling layers;planarizing the filling layers to expose the first mask pattern;removing portions of the filling layers and the filling material layersusing the first and second mask patterns as etching masks.
 17. Themethod of claim 16, wherein the filling layers are formed of the samematerial as the filling material layers.
 18. The method of claim 17,wherein the filling material layers and the filling layers includehigh-density plasma (HDP) oxide layers.
 19. The method of claim 1,wherein the degree of the removal of the filling material layersdetermines the lengths of the vertical channels.
 20. The method of claim1, wherein recessed regions formed by the removal of the fillingmaterial layers have a sufficient depth to isolate adjacent activeregions.
 21. The method of claim 1 further comprising forming gateinsulation layers which cover at least two side surfaces of the exposedactive regions, after removing the exposed portion of the fillingmaterial layers.
 22. The method of claim 3, wherein exposing the activeregions comprises: removing the first mask pattern, a portion of thenitride layer liner, and the pad nitride layers disposed on the topsurfaces of the active regions by anisotropic dry etching; removing aportion of the nitride layer liner remaining on the sidewalls of theactive regions by isotropic wet etching; and removing the sidewall oxidelayers and the pad oxide layers by isotropic wet etching.
 23. The methodof claim 22 further comprising forming gate insulation layers whichcover the top and side surfaces of the exposed active regions, afterexposing the active regions.
 24. The method of claim 3, wherein theexposing of the active region comprises: removing the first maskpattern, a portion of the nitride layer liner, and portions of the padnitride layers disposed on the top surface of the active regions byanisotropic dry etching; removing a portion of the nitride layer linerremaining on the sidewalls of the active regions by isotropic wetetching; and removing the sidewall oxide layers by isotropic wetetching.
 25. The method of claim 24 further comprising forming gateinsulation layers which cover the side surfaces of the exposed activeregions and residual pad nitride layers, after exposing the activeregions.
 26. A method of manufacturing a semiconductor device havingvertical channels, the method comprising: forming element isolationlayers in recessed regions in a semiconductor substrate to define aplurality of active regions; forming mask layers on the active regions;forming a first mask pattern, the first mask pattern formed in stripesoriented in a first direction to cover at least a portion betweenadjacent active regions; forming a second mask pattern, the second maskpattern formed in stripes oriented in a second direction transverse fromthe first direction; removing a portion of the exposed element isolationlayers using the first and second mask patterns as etching masks toexpose at least a portion of the sidewalls of the active regions,wherein removing the portion of the exposed element isolation layerscomprises: forming filling layers on the element isolation layers; andforming the second mask pattern over the first mask pattern to exposeportions of top surfaces of the filling layers and a portion of thefirst mask pattern; removing the first and second mask patterns; andforming gate electrodes on the exposed active regions, wherein a topsurface of one of the element isolation layers protrudes beyond a topsurface of the active regions after removing the first and second maskpatterns and forming the gate electrodes.
 27. The method of claim 26,further comprising removing the mask layers on the active layer beforeforming the gate electrodes, wherein the mask layers include a pad oxidelayer and a pad nitride layer.
 28. The method of claim 26, whereinforming element isolation layers comprises: forming sidewall oxidelayers on sidewalls of the recessed regions; forming a nitride layerliner which covers exposed portions of the sidewall oxide layers and themask layers; and filling the recessed regions with a filling materiallayer.
 29. The method of claim 26, further comprising forming gateinsulation layers to cover the exposed surfaces of the active regionbefore forming the gate electrodes.
 30. The method of claim 26, whereinthe gate electrodes have a same two-dimensional striped shape pattern asthe second mask pattern.
 31. The method of claim 1, wherein the gateelectrodes cover sidewalls and top surfaces of the exposed portions ofthe active regions.
 32. The method of claim 26, wherein the gateelectrodes cover the sidewalls and top surfaces of the exposed portionsof the active regions.